半导体化合物In2S3的合成及表征

半导体化合物In2S3的合成及表征
摘要:本文以TSA和CS2为双硫源，以InCl3•4H2O 为铟源，采用溶剂热法合成出花状In2S3粉体。探究了反应温度和时间对产物的影响，通过调节反应温度和时间，找到了制备In2S3粉体的最佳条件。用X射线粉末衍射仪、场发射扫描电子显微镜、透射电子显微镜等手段对粉体的结构和形貌进行了表征。结果表明，溶剂的流动性及其溶解性对产物均有影响。此外，对产物的热稳定性进行了测试，并对花状产物的形成机理进行了简要简单地探讨。
关键词：半导体材料, 溶剂热法, In2S, 纳米粉体
Synthesis and characterization of semiconductor compounds In2S3
 
Abstract:The flowerlike In2S3 was synthesized by solvothermal route with TSA and carbon disulfide (CS2) as double sulfur sources and with InCl3•4H2O as In sources.  The effect of reaction temperature and time on the products were investigated, and the optimal condition was investigated by adjusting the reaction temperature and time. The crystallinity, phase structure, morphology of as-prepared samples were investigated by X-ray diffraction(XRD), field-emission scanning electron microscopy(FESEM)，Transmission electron microscope(TEM) and IF spectroscopy respectively.
The results show that the products might be influenced by the fluidity and the solubility of solvents. The thermal and optical properties were all characterized, and the mechanism for the formation of the flowerlike products was also simply analyzed.
Key Words:  Semiconductor Materials; Solvothermal; In2S3; nanopowder

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